Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2014. Rev.3.0

SW10N65K

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 29nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel TO-220F/TO251N /TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO220F

TO251N

TO-220

V

DSS

Drain to Source Voltage

650

V

I

D

Continuous Drain Current (@T

10*

A

Continuous Drain Current (@T

6.3*

A

I

DM

Drain current pulsed

(note 1)

40

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

270

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

60

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

25.5

96.2

178.6

W

0.2

0.77

1.43

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO220F

TO251N

TO-220

R

thjc

Thermal resistance, Junction to case

4.9

1.3

0.70

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

48.7

80.0

53.7

1/6

*. Drain current is limited by junction temperature.

BV

I

D

: 10A

R

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-220F

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW F 10N65

SW10N65K

TO-220F

TUBE

2

SW I 10N65

SW10N65K

TO251N

TUBE

3

SW P 10N65

SW10N65K

TO-220

TUBE

Order Codes

General Description

This power MOSFET is produced with advanced super-junction technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, excellent avalanche characteristics, low gate charge and especially in

low on resistance. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

TO-251N

1

2

3

1

2

3

TO-220