Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Feb. 2014. Rev. 1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 127nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

100

V

I

D

Continuous Drain Current (@T

100*

A

Continuous Drain Current (@T

63*

A

I

DM

Drain current pulsed

(note 1)

400

A

V

GS

Gate to Source Voltage

± 20

V

E

AS

Single pulsed Avalanche Energy

(note 2)

1588

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

212

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

390

W

3.1

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.32

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

48.2

1/5

*. Drain current is limited by junction temperature.

BV

I

D

: 100A

R

1

2

3

SW100N10A

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 100N10

SW 100N10A

TO-220

TUBE

Order Codes

1. Gate 2. Drain 3. Source

1

2

3

TO-220