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SSFD3006 Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSFD3006 Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 8 page  SSFD3006 ©Silikron Semiconductor CO.,LTD. 2011.10.10 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 2 ℃ /W Junction-to-ambient ( t ≤ 10s) ④ — 100 ℃ /W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 50 ℃ /W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 30 — — V VGS = 0V, ID = 250μA — 3.8 6 VGS=10V,ID = 15A — 6.4 — TJ = 125℃ — 4.9 8.5 VGS=4.5V,ID =11.5A RDS(on) Static Drain-to-Source on-resistance — 7.2 — mΩ TJ = 125℃ 1 1.5 3 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 1.21 — V TJ = 125℃ — — 1 VDS = 30V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =20V IGSS Gate-to-Source forward leakage -100 — — nA VGS = -20V Qg Total gate charge — 35 — Qgs Gate-to-Source charge — 8 — Qgd Gate-to-Drain("Miller") charge — 18 — nC ID = 32A, VDS=15V, VGS =4.5V td(on) Turn-on delay time — 12 — tr Rise time — 63 — td(off) Turn-Off delay time — 41 — tf Fall time — 11 — ns VGS=4.5V, VDS=15V, RGEN=2Ω，ID = 32A, Ciss Input capacitance — 3833 — Coss Output capacitance — 459 — Crss Reverse transfer capacitance — 427 — pF VGS = 0V VDS = 15V ƒ = 800kHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Maximum Body-Diode Continuous Curren — — 90 A VSD Diode Forward Voltage — 0.72 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 16 — ns Qrr Reverse Recovery Charge — 8.8 — nC TJ = 25°C, IF =30A, di/dt = 150A/μs |
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