CF4N60I

V1.1 2014-01

http://ctc-semicon.com

P2/5

■ DYNAMIC CHARACTERISTICS（Tc=25℃)

CHARACTERISTICS SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Input Capacitance

Ciss

VDS=25V,VGS=0V,

f=1.0MHZ

-

610

-

pF

output Capacitance

Coss

-

70

90

pF

Reverse Transfer

Capacitance

Crss

-

8

11

pF

■ SWITCHING CHARACTERISTICS（Tc=25℃)

CHARACTERISTICS SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Turn-On Delay Time

td(on)

VDD=300V,ID=4.0A,

RG=25Ω

-

13

35

ns

Turn-On Rise Time

tr

-

45

100

ns

Turn-Off Delay Time

td(off)

-

20

60

ns

Turn-Off Rise Time

tf

-

35

80

ns

Total Gate Charge

Qg

VDS=480V，ID=4.0A,

VGS=10V

-

13.3

-

nC

Gate-Source Charge

Qgs

-

4.1

-

nC

Gate-Drain Charge

Qgd

-

2.8

-

nC

■ DRAIN-SOURCE DIODE MAXIMUM RATINGS AND CHARACTERISTICS（Tc=25℃)

CHARACTERISTICS SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Max. Diode Forward

Cuurent

Is

-

-

4

A

Max. Pulsed Forward

Cuurent

ISM

-

-

16

A

Diode Forward Voltage

VSD

VGS=0V,IS=4.0A

-

-

1.4

V

Reverse Recovery Time

trr

VGS=0V,IS=4.0A,

dIF/dt=100A/μs

-

390

-

ns

Reverse Recovery Charge

Qrr

-

1.5

-

μ

C