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2SB511 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB511 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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1 / 3 page  JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION ・ ・With TO-220C package ・Complement to type 2SD325 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -35 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A ICM Collector current -peak -3.0 A Ta=25℃ 1.75 PC Collector dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Fig.1 simplified outline (TO-220) and symbol |
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