MSA-0200 datasheet(2/4 Pages) HP

2 / 4 page

6-267

Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current

60 mA

Power Dissipation[2,3]

325 mW

RF Input Power

+13dBm

Junction Temperature

200

°C

Storage Temperature

–65 to 200

°C

Thermal Resistance[2,4]:

jc = 35°C/W

Part Number Ordering Information

Part Number

Devices Per Tray

MSA-0200-GP4

100

Power Gain (|S21| 2)

f = 0.1 GHz

12.5

∆GP

Gain Flatness

f = 0.1 to 1.8 GHz

± 0.6

f3 dB

3 dB Bandwidth

GHz

2.8

Input VSWR

f = 0.1 to 3.0 GHz

1.4:1

Output VSWR

f = 0.1 to 3.0 GHz

1.4:1

Ω Noise Figure

f = 1.0 GHz

6.5

P1 dB

Output Power at 1 dB Gain Compression

f = 1.0 GHz

dBm

4.5

IP3

Third Order Intercept Point

f = 1.0 GHz

dBm

17.0

Group Delay

f = 1.0 GHz

psec

125

Device Voltage

4.5

5.0

5.5

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–8.0

Notes:

1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current

is on the following page.

2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.

MSA-0200 Electrical Specifications[1], T

A = 25°C

Symbol

Parameters and Test Conditions[2]: I

d = 25 mA, ZO = 50 Ω

Units

Min.

Typ.

Max.

VSWR

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TMounting Surface (TMS) = 25°C.

3. Derate at 28.6 mW/

°C for T

MS > 189°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of

jc than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

MSA-0200 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

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