TN1205H datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

TN1205H

2/10

Doc ID 018497 Rev 4

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS) On-state rms current (180° conduction angle)

TO220-AB,

D2PAK

Tc = 136 °C

IT(AV)

Average on-state current (180° conduction angle)

7.6

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj = 25 °C

126

tp = 10 ms

120

I2tI2t Value for fusing

tp = 10 ms

A2S

VDSM,

VRSM

Non repetitive surge peak off-state voltage

tp = 10 ms

VDRM, VRRM

+100

dI/dt

Critical rate of rise of on-state current IG = 2 x IGT,

tr ≤ 100 ns

F = 60 Hz

Tj = 150 °C

100

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

PG(AV)

Average gate power dissipation

Tj = 150 °C

VRGM

Maximum peak reverse gate voltage

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

°C

Maximum lead temperature for soldering during 10 s.

260

°C

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

MIN.

MAX.

VGT

VD = VDRM, RL = 3.3 kΩ

MAX.

1.3

VGD

VD = VDRM, RL = 3.3 kΩ

MIN.

0.2

IT = 500 mA gate open

MAX.

IG = 1.2 IGT

MAX.

dV/dt

VD = 67% VDRM gate open

Tj = 125 °C

MIN.

200

V/µs

Tj = 150 °C

100

tgt

ITM = 40 A, VD = 500 V, IG = 100 mA, dIG/dt = 5 A/µs

typ.

1.9

µs

VDM = 335 V, Tj =125 °C, ITM = 20 A, VR = 25 V, (dIT/dt)Max = 30 A/µs,

dVD/dt = 50 V/µs, RGK = 100 Ω

typ.

µs

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