HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6415

Issued Date : 1992.11.25

Revised Date : 2002.02.05

Page No. : 1/4

HBC337

HSMC Product Specification

HBC337

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HBC337 is designed for driver and output-stage of audio

amplifiers.

Features

• High DC Current Gain: 100-600 at IC=100mA,VCE=1V

• Complementary to HBC327

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 50 V

VCEO Collector to Emitter Voltage ...................................................................................... 45 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current ....................................................................................................... 800 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

50

-

-

V

IC=100uA, IE=0

BVCEO

45

-

-

V

IC=10mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

100

nA

VCB=45V, IE=0

*VCE(sat)

-

-

0.7

V

IB=500mA, IB=50mA

VBE(on)

-

-

1.2

V

IC=300mA, VCE=1V

*hFE1

100

-

600

VCE=1V, IC=100mA

*hFE2

40

-

-

VCE=1V, IC=300mA

fT

-

210

-

MHZ

VCE=5V, IC=10mA, f=100MHZ

Cob

-

4

-

pF

VCB=10V, IE=0, f=1MHZ

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE1

Rank

16

25

40

Range

100-250

160-400

250-600

TO-92