HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6802

Issued Date : 1995.12.09

Revised Date : 2002.10.25

Page No. : 1/2

HMBD4148

HSMC Product Specification

HMBD4148

HIGH-SPEED SWITCHING DIODE

Description

The HMBD4148 is designed for high-speed switching application in hybrid

thick-and thin-film circuits. The devices is manufactured by the silicon

epitaxial planar process and packed in plastic surface mount package.

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................ -65 ~ +150

°C

Junction Temperature ................................................................................................................ +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)............................................................................................. 225 mW

• Maximum Voltages and Currents (Ta=25°C)

Continuous Reverse Voltage .......................................................................................................... 70 V

Continuous Forward Current....................................................................................................... 200 mA

Peak Forward Surge Current ...................................................................................................... 500 mA

°C)

Characteristic

Symbol

Condition

Min

Max

Unit

Forward Voltage

VF

IF=10mA

-

1

V

Reverse Breakdown

VR

IR=100uA

100

-

V

Reverse Current

IR

VR=75V

-

5

uA

Total Capacitance

CT

VR=0, F=1MHz

-

4

pF

Reverse Recovery Time

Trr

IF=IR=10mA, RL=100

Ω

Measured at IR=1mA

-4

nS

SOT-23