Total Gate Charge

-4.5V

11

14.5

nC

Gate-Source Charge

1.5

nC

Gate-Drain Charge

2.1

nC

Drain-Source Diode Characteristics and Maximun Ratings

-0.75

A

-1.2

V

1.Repetitive Rating : Pulse width limited by maximum junction temperatu. 2.Surface Mounted on FR4 Board,t<5 sec.

3.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

4.Guaranteed by design, not subject to production testing.

Plastic-Encapsulate Mosfets

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

10

8

6

4

2

0

01

45

3

2

-V

-V

-V

-V

10

8

6

4

2

0

0.0

1.0

2.0

3.0

0.5

1.5

T

-55 C

2.5

25 C

Ciss

Coss

Crss

1200

1000

800

600

400

200

0

02

4

6

8

10

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

2.2

1.9

1.6

1.3

1.0

0.7

0.4

V

I

-100

-50

0

50

100

150

200

Page:P3 -P2

MAKO SEMICONDUCTOR CO.,LIMITED

Typical

Characteristics

SI2301

http://www.makosemi.hk/