STL11N3LLH6 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STL11N3LLH6

Description	N-channel 30 V, 0.006 typ., 11 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

May 2013

DocID17755 Rev 2

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STL11N3LLH6

N-channel 30 V, 0.006

Ω typ., 11 A STripFET™ VI DeepGATE™

Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

• Very low switching gate charge

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

8

12

3

4

7

6

5

AM15810v1

PowerFLAT™ 3.3 x 3.3

1

2

3

4

Order code

VDS

RDS(on) max.

ID

STL11N3LLH6

30 V

0.0075

Ω

11 A (1)

1.

The value is rated according Rthj-pcb.

Table 1. Device summary

Order code

Marking

Package

Packaging

STL11N3LLH6

11N3L

PowerFLAT™ 3.3 x 3.3

Tape and reel

www.st.com

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