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MBRF40045 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # MBRF40045
Description  Silicon Power Schottky Diode
PDF  3 Pages
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MBRF40045 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  MBRF40045 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. MBRF40045 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. MBRF40045 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 45 V - 100 V
IF(AV) = 400 A
Features
• High Surge Capability
TO-244AB Package
• Not ESD Sensitive
Parameter
Symbol
MBRF40045(R) MBRF40060(R)
Unit
Repetitive peak reverse
voltage
VRRM
45
60
V
RMS reverse voltage
VRMS
32
42
V
Conditions
100
70
MBRF40045 thru MBRF400100R
MBRF400100(R)
80
57
MBRF40080(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottky Diode
• Types from 45 V to 100 V VRRM
DC blocking voltage
VDC
45
60
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MBRF40045(R) MBRF40060(R)
Unit
Average forward current
(per pkg)
IF(AV)
400
400
A
Maximum forward voltage
(per leg)
0.70
0.75
11
10
10
50
50
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R
ΘJC
0.35
0.35
°C/W
3000
3000
A
Tj = 100 °C
10
10
-55 to 150
-55 to 150
100
80
-55 to 150
MBRF400100(R)
11
MBRF40080(R)
0.35
Tj = 150 °C
0.35
0.84
0.84
50
50
TC = 125 °C
400
400
tp = 8.3 ms, half sine
3000
3000
mA
V
Tj = 25 °C
IFM = 200 A, Tj = 25 °C
Conditions
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated DC
blocking voltage (per leg)
IR
VF
Peak forward surge current
(per leg)
IFSM
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1


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