Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT60020(R) MBRT60030(R)

Unit

Repetitive peak reverse voltage

20

30

V

RMS reverse voltage

14

21

V

DC blocking voltage

20

30

V

Conditions

40

28

40

35

MBRT60020 thru MBRT60040R

MBRT60040(R)

35

25

MBRT60035(R)

Silicon Power

Schottky Diode

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRT60020(R) MBRT60030(R)

Unit

Average forward current (per

pkg)

600

600

A

Maximum instantaneous

forward voltage (per leg)

0.75

0.75

11

10

10

50

50

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R

ΘJC

0.28

0.28

°C/W

10

10

600

600

Peak forward surge current

(per leg)

4000

4000

4000

4000

V

-55 to 150

-55 to 150

40

35

A

-55 to 150

MBRT60040(R)

11

MBRT60035(R)

0.28

0.28

0.75

0.75

50

mA

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

50

www.genesicsemi.com/silicon‐products/schottky‐rectifiers/

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