IXTN32P60P datasheet(1/5 Pages) IXYS

Part #	IXTN32P60P

Description	PolarP Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 600

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 600

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 32

A

I

DM

T

C = 25°C, pulse width limited by TJM

- 90

A

I

AR

T

C = 25°C

- 32

A

E

AR

T

C = 25°C

3.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

890

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

V

ISOL

50/60 Hz, RMS

t = 1 minute

2500

V~

I

ISOL ≤ 1mA

t = 1 second

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal Connection torque

1.3/11.5

Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 600

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.5

- 4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

- 50

μA

V

GS = 0V

T

J = 125°C

- 250

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

350 m

Ω

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTN32P60P

V

DSS

= - 600V

I

D25

= - 32A

R

DS(on) ≤

≤≤≤≤

350m

Ω

Features

International standard package

Rugged PolarPTM process

Avalanche Rated

Low package inductance

Applications

Hight side switching

Push-pull amplifiers

DC Choppers

Automatic test equipment

Either source terminal at miniBLOC can

be used as Main or Kelvin Source.

miniBLOC, SOT-227 (IXTN)

E153432

G

D

S

G = Gate

D = Drain

S = Source

DS99991(05/08)

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