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ICS9112-35 Datasheet(PDF) 3 Page - Integrated Circuit Systems |
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ICS9112-35 Datasheet(HTML) 3 Page - Integrated Circuit Systems |
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3 / 5 page ![]() 3 ICS9112-35/36 Preliminary Product Preview Note 1: Parameter is guaranteed by design and characterization. Not 100% tested in production. Electrical Characteristics at 5.0V Operating VDD = +4.5V to +5.5V; TA =0°C to 70°C unless otherwise stated Absolute Maximum Ratings AVDD, VDD referenced to GND . . . . . . . . . . . . . . . 7V Operating temperature under bias. . . . . . . . . . . . . . . . 0°C to +70°C Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Voltage on I/O pins referenced to GND. . . . . . . . . . . GND -0.5V to VDD +0.5V Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. s c i t s i r e t c a r a h C C D R E T E M A R A PL O B M Y SS N O I T I D N O C T S E TN I MP Y TX A MS T I N U e g a t l o V w o L t u p n IV L I -- 8 . 0V e g a t l o V h g i H t u p n IV H I 0 . 2- - V t n e r r u C w o L t u p n II L I V N I ) t u p n i p u - l l u P ( V 0 =0 . 6 1 -0 . 6 -- A µ t n e r r u C h g i H t u p n II H I V N I V = D D 0 . 2 -- 0 . 2A µ e g a t l o V w o L t u p t u O 1 V L O I L O A m 0 1 =- 5 1 . 00 4 . 0V e g a t l o V h g i H t u p t u O 1 V H O I H O A m 0 3 - =4 . 25 2 . 3- V t n e r r u C w o L t u p t u O 1 I L O V L O V 8 . 0 =0 . 2 20 . 5 3- A m t n e r r u C h g i H t u p t u O 1 I H O V H O V 0 . 2 =- 0 . 0 5 -0 . 5 3 -A m t n e r r u C y l p p u SI D D d e d a o l n U- 0 . 2 20 . 5 4A m r o t s i s e R p u - l l u P 1 R u p -0 0 1- s m h o k s c i t s i r e t c a r a h C C A e m i T e s i R 1 T 1 r V 0 . 2 o t 8 . 0 , d a o l F p 5 1- 8 . 02 . 1s n e m i T l l a F 1 T 1 f V 8 . 0 o t 0 . 2 , d a o l F p 5 1- 7 . 02 . 1s n e l c y C y t u D 1 Dt V 4 . 1 @ d a o l F p 5 10 . 2 40 . 9 40 . 5 5% a m g i S e n O , r e t t i J 1 T s 1 j d a o l F p 5 1- 0 . 5 10 . 5 4s p e t u l o s b A , r e t t i J 1 T b a j d a o l F p 5 10 . 0 3 1 -0 . 0 3 1s p r e t t i J e v i t a l u m u c c A 1 T c c a j e l c y C 6 5 2 @ d a o l F p 5 1- 0 . 7 1- s p y c n e u q e r F t u p n I 1 Fi -0 . 7 1- z H M y c n e u q e r F t u p t u O 1 Fo -5 2 . 6 0 1- z H M e m i T p u - r e w o P 1 T u p -8 5 . 70 . 8 1s m e c n a t i c a p a C t u p n I l a t s y r C 1 C x n i ) 1 n i P ( 1 X ) 8 n i P ( 2 X -0 . 3- F p |
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