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BCX53 Datasheet(PDF) 2 Page - Bruckewell Technology LTD

Part # BCX53
Description  PNP Silicon AF Transistors
PDF  6 Pages
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

BCX53 Datasheet(HTML) 2 Page - Bruckewell Technology LTD

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BCX51-BCX53
PNP Silicon AF Transistors
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
BCX51
BCX52
BCX53
Unit
VCEO
Collector-Emitter Voltage
45
60
80
V
VCBO
Collector-Base Voltage
45
60
100
V
VEBO
Emitter-Base Voltage
5
5
5
V
IC
Collector Current
—Continuous
1
A
ICM
Peak collector current, tp ≤ 10
1.5
A
IB
Base current
100
mA
IBM
Peak base current
200
mA
Ptot
Total power dissipation, TS ≤ 120 °C
2
W
TJ
Junction temperature
150
°C
Tstg
Storage temperature
-65~+150
°C
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
RthJS
Junction - soldering point
≤ 15
K/W
DC CHARACTERISTICS
Symbol
Parameter
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown V oltage
(Ic=-10mAdc,IB=0)
BCX51
45
V
BCX52
60
V
BCX53
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
(Ic=-
10μAdc,IE=0)
BCX51
45
V
BCX52
60
V
BCX53
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-
10μAdc,Ic=0)
BCX51
5
V
BCX52
5
V
BCX53
5
V
ICBO
Collector Cutoff Current V
V
(VCB=-30v)
0.1
uA
(VcB=-30Vdc,TA=150°C)
20
uA
HFE
DC Current Gain
BCX51
25
(IC = 5 mA, VCE = 2 V)
BCX52
25
BCX53
25
(IC = 150 mA, VCE = 2 V)
BCX51-53
40
250
hFE-grp.10
63
100
160
hFE-grp.16
100
160
250



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