MSD2N70 datasheet(2/8 Pages) BWTECH

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MSD2N70

700V N-Channel MOSFET

Publication Order Number: [MSD2N70]

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

EAS

Single Pulsed Avalanche Energy

110

EAR

Repetitive Avalanche Energy

4.4

IAR

Continuous Source Current (Diode Conduction)

1.6

dV/dt

Peak Diode Recovery dV/dt

5.5

V/ns

Power Dissipation (TC=25°C)

Power Dissipation (TC=100°C)

0.22

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

NOTE:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal Characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Maximum

Units

Rthjc

Typical thermal resistance

2.87

°C/W

RθJA

Typical thermal resistance

* When mounted on the minimum pad size recommended (PCB Mount)

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID = 250μA

2.0

4.0

*RDS(ON)

VGS = 10V , ID = 0.8 A

5.5

6.0

BVDSS

VGS = 0 V , ID = 250 μA

700

△BV

DSS /△TJ

ID = 250μA, Referenced to 25°C

0.7

IDSS

VDS = 700 V , VGS = 0 V

VDS = 560 V , VGS = 0 V , Tj = 125°C

100

IGSSF

VDS = 30 V, VDs = 0 V

100

IGSSR

VDS = -30 V, VDs = 0 V

-100

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

CISS

VDS = 25 V, VGS = 0 V,

F = 1.0MHz

340

445

COSS

CRSS

7.5

td(on)

VDS = 350 V, ID = 1.6 A,

RG = 25 Ω

td(off)

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