MSD30P06 datasheet(2/5 Pages) BWTECH

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MSD30P06

P-Channel 60-V (D-S) MOSFET

Publication Order Number: [MSD30P06]

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Power Dissipation (TC=25°C)

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +175

°C

Note:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal Characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Maximum

Units

RθJc

Maximum Junction-to-Case

3.0

°C/W

RθJA

Maximum Junction-to-Ambient

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID = 250μA

-1.0

RDS(ON)

VGS = -10 V , ID = 28 A

VGS = -4.5 V , ID = -24 A

IDSS

VDS = -48 V , VGS = 0 V

VDS = -48 V , VGS = 0 V , Tj = 55°C

-1

-10

ID(ON)

VDS = -5 V, VGS = -10 V

-20

IGSS

VDS = 0 V , VGS = ±20 V

±100

Gfs

VDS = -15 V , ID = -28 A

VSD

IS = 2.5 A, VGS = 0 V

-1.2

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

td(on)

VDD= -30 V, ID = -1.0 A,

RL = 30ohm , VGEN = -10 V

td(off)

VDS = -30 V , ID = -2.8 A,

VGS = -4.5 V

Qgs

Qgd

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