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MSF2N70 Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MSF2N70 Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 8 page ![]() MSF2N70 700V N-Channel MOSFET Publication Order Number: [MSF2N70] © Bruckewell Technology Corporation Rev. A -2014 Source-Drain Diode Characteristics Symbol Test Conditions Min Typ. Max. Units IS -- -- 1.6 A ISM -- -- 6 VSD IS = 1.6 A , VGS = 0 V -- -- 1.5 V trr IS = 1.6 A , VGS = 0 V diF/dt=100A/μs -- 250 -- ns Qrr -- 1.2 -- μC Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS=1.6A, VDD=50V, RG=25W, Starting TJ=25℃ 3. ISD≦1.6A, di/dt≦.00A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature |
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