MSF4N65 datasheet(3/6 Pages) BWTECH

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MSF4N65

650V N-Channel MOSFET

Publication Order Number: [MSF4N65]

Switching Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Time

VDS = 325 V, ID = 4.0 A,

RG = 25 Ω

Turn-On Time

td(off)

Turn-Off Delay Time

100

Turn-Off Fall Time

Total Gate Charge

VDS = 520 V,ID = 4.0 A,

VGS = 10 V

Qgs

Gate-Source Charge

2.8

Qgd

Gate-Drain Charge

6.0

Source-Drain Diode Maximum Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source-Drain Diode Forward Current

3.6

ISM

Pulsed Source-Drain Diode Forward Current

VSD

Source-Drain Diode Forward Voltage

IS = 4.0 A , VGS = 0 V

1.5

trr

Reverse Recovery Time

IF = 4.0 A , VGS = 0 V

diF/dt=100A/μs

300

Qrr

Reverse Recovery Charge

2.2

μC

Notes;

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS=4A, VDD=50V, RG=25W, Starting TJ=25℃

3. ISD≦4A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width

≦ 300μs, Duty Cycle≦ 2%

5. Essentially Independent of Operating Temperature

MSF4N65 Datasheet(PDF) 3 Page - Bruckewell Technology LTD

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