M25P64-VMF6TPBA datasheet(13/55 Pages) NUMONYX

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M25P64

Operating features

13/55

Operating features

4.1

Page Programming

To program one data byte, two instructions are required: Write Enable (WREN), which is

one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This

is followed by the internal Program cycle (of duration tPP).

To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be

programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive

addresses on the same page of memory.

For optimized timings, it is recommended to use the Page Program (PP) instruction to

program all consecutive targeted Bytes in a single sequence versus using several Page

Program (PP) sequences with each containing only a few Bytes (see Page Program (PP)

and Table 16: AC characteristics).

4.2

Sector Erase and Bulk Erase

The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be

applied, the bytes of memory need to have been erased to all 1s (FFh). This can be

achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the

entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of

duration tSE or tBE).

The Erase instruction must be preceded by a Write Enable (WREN) instruction.

4.3

Polling during a Write, Program or Erase cycle

A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase

(SE or BE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The

Write In Progress (WIP) bit is provided in the Status Register so that the application program

can monitor its value, polling it to establish when the previous Write cycle, Program cycle or

Erase cycle is complete.

4.4

Fast Program/Erase mode

The Fast Program/Erase mode is used to speed up programming/erasing. The device

enters the Fast Program/Erase mode during the Page Program, Sector Erase, or Bulk

Erase(1) instruction whenever a voltage equal to VPPH is applied to the W/VPP pin.

The use of the Fast Program/Erase mode requires specific operating conditions in addition

to the normal ones (VCC must be within the normal operating range):

the voltage applied to the W/VPP pin must be equal to VPPH (see Table 10)

ambient temperature, TA must be 25°C ±10°C,

the cumulated time during which W/VPP is at VPPH should be less than 80 hours

Avoid applying VPPH to the W/VPP pin during Bulk Erase with process technology T9HX devices, identified by

process identification digit "4" in the device marking.

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