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GMBT2907 Datasheet(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

Part # GMBT2907
Description  PNP Switching Transistor
PDF  4 Pages
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Manufacturer  GSME [Guilin Strong Micro-Electronics Co., Ltd.]
Direct Link  http://www.gsme.com.cn
Logo GSME - Guilin Strong Micro-Electronics Co., Ltd.

GMBT2907 Datasheet(HTML) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

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桂 林 斯 壯 微 電 子 有 限 責 任 公 司
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GMBT2907(销售型號 MMBT2907) GMBT2907A(销售型號 MMBT2907A)
■
FEATURES
FEATURES
FEATURES
FEATURES 特點
PNP
Switching Transistor
■
MAX
MAX
MAX
MAXIMUM
IMUM
IMUM
IMUM RATINGS
RATINGS
RATINGS
RATINGS 最大額定值
Characteristic
特性參數
Symbol
符號
GMBT2907
GMBT2907A
Unit
單位
Collector-Emitter Voltage
集電極-發射極電壓
VCEO
-40
-60
Vdc
Collector-Base Voltage
集電極-基極電壓
VCBO
-60
-60
Vdc
Emitter-Base Voltage
發射極-基極電壓
VEBO
-5.0
-5.0
Vdc
Collector Current-Continuous
集電極電流-連續
Ic
-600
-600
mAdc
■
THERMAL
THERMAL
THERMAL
THERMAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 熱特性
Characteristic
特性參數
Symbol
符號
Max
最大值
Unit
單位
Total Device Dissipation 總耗散功率
FR-5 Board(1)
TA
=25℃溫度爲 25℃
Derate above25℃
超過 25℃遞減
PD
225
1.8
mW
mW/℃
Total Device Dissipation 總耗散功率
Alumina Substrate 氧化鋁襯底,(2)TA
=25℃
Derate above25℃ 超過 25℃遞減
PD
300
2.4
mW
mW/℃
Thermal Resistance Junction to Ambient 熱阻
R
ΘJA
417
℃/W
Junction and Storage Temperature 結溫和儲存溫度
TJ,Tstg
-55to+150℃
■
DEVICE
DEVICE
DEVICE
DEVICE
MARKING
MARKING
MARKING
MARKING 打標
GM
GM
GM
GMBT
BT
BT
BT2
2
2
2907
907
907
907(销售型號 MMBT2907)=
=
=
=M2
M2
M2
M2B;GM
B;GM
B;GM
B;GMBT
BT
BT
BT2
2
2
2907
907
907
907A
A
A
A(销售型號 MMBT2907A)=
=
=
=2F
2F
2F
2F


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