Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• High hFE

• Low noise

• Complementary to KTA1504

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current -Continuous

0.15

A

Collector Power dissipation

0.15

W

Junction Temperature

150

Storage Temperature

Tstg

-55to +150

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

60

V

Collector-emitter breakdown voltage

50

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

0.1

Emitter cut-off current

0.1

DC current gain

70

700

Collector-emitter saturation voltage

0.1

0.25

V

base-emitter saturation voltage

1

V

Transition frequency

80

MHz

Collector output capacitance

2.0

3.5

pF

Noise figure

NF

1.0

10

dB

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

Marking

ALO

ALY

ALG

ALL

KTC3875(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/