Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• High power gain

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

35

V

Collector-Emitter Voltage

30

V

Emitter-Base Voltage

4

V

Collector Current -Continuous

50

mA

Collector Power dissipation

0.15

W

Junction Temperature

150

Storage Temperature

Tstg

-55to +150

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

35

V

Collector-emitter breakdown voltage

30

V

Emitter-base breakdown voltage

4

V

Collector cut-off current

0.1

μA

Emitter cut-off current

1.0

μA

DC current gain

40

240

Collector-emitter saturation voltage

0.4

V

Base-emitter saturation voltage

1.0

V

Transition frequency

100

400

MHz

Collector output capacitance

Cob

1.4

2.0

3.2

pF

Rank

R

O

Y

Range

40-80

70-140

120-240

Marking

RR

RO

RY

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/