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28F008SA Datasheet(PDF) 7 Page - Intel Corporation

Part # 28F008SA
Description  8 MBIT (1 MBIT x 8) FLASH MEMORY
PDF  26 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F008SA Datasheet(HTML) 7 Page - Intel Corporation

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VE28F008
Table 2 Bus Operations
Mode
Notes
RP
CE
OE
WE
A0
VPP
DQ0–7
RYBY
Read
1 2 3
VIH
VIL
VIL
VIH
XX
DOUT
X
Output Disable
3
VIH
VIL
VIH
VIH
X
X
High Z
X
Standby
3
VIH
VIH
X
X
X
X
High Z
X
PowerDown
VIL
X
X
X
X
X
High Z
VOH
Intelligent Identifier (Mfr)
VIH
VIL
VIL
VIH
VIL
X
89H
VOH
Intelligent Identifier (Device)
VIH
VIL
VIL
VIH
VIH
X
A2H
VOH
Write
3 4 5
VIH
VIL
VIH
VIL
XX
DIN
X
NOTES
1 Refer to DC Characteristics When VPP e VPPL memory contents can be read but not written or erased
2 X can be VIL or VIH for control pins and addresses and VPPL or VPPH for VPP See DC Characteristics for VPPL and VPPH
voltages
3 RYBY is VOL when the Write State Machine is executing internal block erase or byte write algorithms It is VOH when the
WSM is not busy in Erase Suspend mode or deep powerdown mode
4 Command writes involving block erase or byte write are only successfully executed when VPP e VPPH
5 Refer to Table 3 for valid DIN during a write operation
data at the outputs Chip Enable (CE) is the device
selection control and when active enables the se-
lected memory device Output Enable (OE)isthe
data inputoutput (DQ0–DQ7) direction control and
when active drives data from the selected memory
onto the IO bus RP and WE must also be at VIH
Figure 8 illustrates read bus cycle waveforms
Output Disable
With OE at a logic-high level (VIH) the device out-
puts are disabled
Output pins (DQ0–DQ7) are
placed in a high-impedance state
Standby
CE at a logic-high level (VIH) places the VE28F008
in standby mode Standby operation disables much
of the VE28F008’s circuitry and substantially reduc-
es device power consumption The outputs (DQ0–
DQ7) are placed in a high-impedence state indepen-
dent of the status of OE If the VE28F008 is dese-
lected during block erase or byte write the device
will continue functioning and consuming normal ac-
tive power until the operation completes
Deep Power-Down
The VE28F008 offers a deep powerdown feature
entered when RP is at VIL During read modes RP at
a logic-low level (VIL) deselects the memory places
output drivers in a high-impedence state and turns
off all internal circuits The VE28F008 requires time
tPHQV (see AC Characteristics-Read-Only Opera-
tions) after return from powerdown until initial mem-
ory access outputs are valid After this wakeup inter-
val normal operation is restored The Command
User Interface is reset to Read Array mode and the
upper 5 bits of the Status Register are cleared to
value 10000 upon return to normal operation
During block erase or byte write modes RP at a log-
ic-low level (VIL) will abort either operation Memory
contents of the block being altered are no longer
valid as the data will be partially written or erased
Time tPHWL after RP goes to logic-high (VIH) is re-
quired before another command can be written
Intelligent Identifier Operation
The intelligent identifier operation outputs the manu-
facturer code 89H and the device code A2H for
the VE28F008 The system CPU can then automati-
cally match the device with its proper block erase
and byte write algorithms
The manufacturer and device codes are read via the
Command User Interface Following a write of 90H
to the Command User Interface a read from ad-
dress location 00000H outputs the manufacturer
code (89H) A read from address location 00001H
outputs the device code (A2H) It is not necessary to
have high voltage applied to VPP to read the intelli-
gent identifier from the Command User Interface
7



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