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28F008SA Datasheet(PDF) 7 Page - Intel Corporation |
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28F008SA Datasheet(HTML) 7 Page - Intel Corporation |
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7 / 26 page ![]() VE28F008 Table 2 Bus Operations Mode Notes RP CE OE WE A0 VPP DQ0–7 RYBY Read 1 2 3 VIH VIL VIL VIH XX DOUT X Output Disable 3 VIH VIL VIH VIH X X High Z X Standby 3 VIH VIH X X X X High Z X PowerDown VIL X X X X X High Z VOH Intelligent Identifier (Mfr) VIH VIL VIL VIH VIL X 89H VOH Intelligent Identifier (Device) VIH VIL VIL VIH VIH X A2H VOH Write 3 4 5 VIH VIL VIH VIL XX DIN X NOTES 1 Refer to DC Characteristics When VPP e VPPL memory contents can be read but not written or erased 2 X can be VIL or VIH for control pins and addresses and VPPL or VPPH for VPP See DC Characteristics for VPPL and VPPH voltages 3 RYBY is VOL when the Write State Machine is executing internal block erase or byte write algorithms It is VOH when the WSM is not busy in Erase Suspend mode or deep powerdown mode 4 Command writes involving block erase or byte write are only successfully executed when VPP e VPPH 5 Refer to Table 3 for valid DIN during a write operation data at the outputs Chip Enable (CE) is the device selection control and when active enables the se- lected memory device Output Enable (OE)isthe data inputoutput (DQ0–DQ7) direction control and when active drives data from the selected memory onto the IO bus RP and WE must also be at VIH Figure 8 illustrates read bus cycle waveforms Output Disable With OE at a logic-high level (VIH) the device out- puts are disabled Output pins (DQ0–DQ7) are placed in a high-impedance state Standby CE at a logic-high level (VIH) places the VE28F008 in standby mode Standby operation disables much of the VE28F008’s circuitry and substantially reduc- es device power consumption The outputs (DQ0– DQ7) are placed in a high-impedence state indepen- dent of the status of OE If the VE28F008 is dese- lected during block erase or byte write the device will continue functioning and consuming normal ac- tive power until the operation completes Deep Power-Down The VE28F008 offers a deep powerdown feature entered when RP is at VIL During read modes RP at a logic-low level (VIL) deselects the memory places output drivers in a high-impedence state and turns off all internal circuits The VE28F008 requires time tPHQV (see AC Characteristics-Read-Only Opera- tions) after return from powerdown until initial mem- ory access outputs are valid After this wakeup inter- val normal operation is restored The Command User Interface is reset to Read Array mode and the upper 5 bits of the Status Register are cleared to value 10000 upon return to normal operation During block erase or byte write modes RP at a log- ic-low level (VIL) will abort either operation Memory contents of the block being altered are no longer valid as the data will be partially written or erased Time tPHWL after RP goes to logic-high (VIH) is re- quired before another command can be written Intelligent Identifier Operation The intelligent identifier operation outputs the manu- facturer code 89H and the device code A2H for the VE28F008 The system CPU can then automati- cally match the device with its proper block erase and byte write algorithms The manufacturer and device codes are read via the Command User Interface Following a write of 90H to the Command User Interface a read from ad- dress location 00000H outputs the manufacturer code (89H) A read from address location 00001H outputs the device code (A2H) It is not necessary to have high voltage applied to VPP to read the intelli- gent identifier from the Command User Interface 7 |
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