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Rev Date:

700 to 2500 MHz high power, class AB design utilizing GaN technology

Part Number: QBS-560

5/14/2014

1

Broadband 32 Watt GaN Power Amplifier

API Technologies’ Model QBS-560 is a high power, class AB solid state amplifier which utilizes the latest GaN technology to offer

broadband performance from 700 to 2500 MHz. The RFPA has an integrated, high efficiency DC to DC converter to promote

operation over a wide DC input voltage range of +25 to +32 VDC; drawing 3.1 amps with a saturated gain of 37 dB, and a typical

output power of 32 watts.

The microprocessor based design incorporates an adaptive biasing algorithm to optimize efficiency and output power across the

frequency band under varying load conditions. This rugged, high reliability GaN based amplifier is capable of performing in

adverse commercial and military environments with EMI and moisture sealing, and will not be damaged operating into a 10:1

load mismatch at full rated power. Optional RF blanking controlled through an LVDS signal, and forward/reverse power

detection are available upon request.

o

32 Watts Typical Saturated Output Power

o

Rugged GaN Technology

o

Adaptive Biasing to Promote Efficiency

o

Optional Forward/Reverse Power Detection

o

Blanking Feature Available

Maximum Ratings

Protection

Parameter

Typical

Min / Max

Frequency Range

700 - 2500 MHz

800 - 2500 MHz

Linear Gain

44 dB

─

37 dB

─

32 watts

25 watts Min.

± 0.7 dB

± 1.0 dB Max.

± 1.0 dB

─

Input VSWR

1.3 :1

1.5 :1 Max.

Noise Figure

6 dB

7 dB Max.

-18 dBc

─

-30 dBc

─

-60 dBc

─

DC Supply Voltage

+28 Volts

+25 to +32 Volts

Current Draw (Quiescent)

500 mA

─

3.1 Amps

3.1 Amps

5 µs

10 µs

Package Dimensions

7.98(L) x 4.59(W) x 1.55(H) inches

Material

6061-T6 Aluminum Alloy

Finish

Clear Iridite (MIL-DTL-5541F, Class 3)

Weight (no heatsink)

2.5 lbs (1134 grams)

RF Connectors

SMA Female (4-Hole Flange)

DC Interface Connector

15 Pin D-Sub Plug

Storage Temperature

-45°C to +100°C

Operating Temperature (Case)

-20°C to +80°C

DC Input Voltage

+32 VDC

RF Input Power

+23 dBm

VSWR Tolerance

10 :1

Case Shut Off Temperature

+85°C

Notes:

1. Specifications are based on measured

performance in a 50Ω system.

2. Switching time pertains to an optional

blanking function controlled by an LVDS

signal.

o

Microprocessor Based Control



Fault Monitoring



Temperature Compensation



Sequencing



Interface Options

Features

*Similar Model