BC856W_15 datasheet(2/3 Pages) KEXIN

2 / 3 page

SMD Type

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Transistors

PNP Transistors

BC856W,BC857W,BC858W

(KC856W,KC857W,KC858W)

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Electrical Characteristics Ta = 25℃

Symbol

Test Conditions

Min

Typ

Max Unit

BC856W

-80

BC857W

-50

BC858W

-30

BC856W

-65

BC857W

-45

BC858W

-30

VEBO IE= -100μA， IC=0

-5

BC856W

VCB= -80 V , IE=0

BC857W

VCB= -50 V , IE=0

BC858W

VCB= -30 V , IE=0

IEBO

VEB= -5V , IC=0

-0.1

VCE(sat) IC=-100 mA, IB=-5mA

-0.65

VBE(sat) IC=-100 mA, IB=-5mA

-1.1

BC846AW,847AW,848AW

125

250

BC846BW,847BW,848BW

220

475

BC847CW,848CW

420

800

Cob

VCB= -10V,f=1MHz

4.5

VCE= -5V, IC=-10mA,f=100MHz 100

MHz

Emitter cut-off current

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown

voltage

Collector-base cut-off current

VCBO Ic= -100 μA， IE=0

VCEO Ic= -10 mA， IB=0

Emitter - base breakdown voltage

ICBO

-0.1

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

hFE

VCE= -5V, IC=-2mA

DC current gain

Base - emitter saturation voltage

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Classification of hfe

Type

BC856AW

BC856BW

BC857AW

BC857BW

BC857CW

BC858AW

BC858BW

BC858CW

Range

125-250

220-475

125-250

220-475

420-800

125-250

220-475

420-800

Marking

BC856W Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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