2SB1070-P datasheet(2/2 Pages) KEXIN

2 / 2 page

SMD Type

www.kexin.com.cn

Transistors

PNP Transistors

2SB1070

■

Typical Characterisitics

VBE(sat) IC

hFE

VCE

VCE(sat) IC

ton, tstg, tf

Safe operation area

100

Ambient temperature Ta (°C)

(1)TC=Ta

(2)With a 50×50×2mm

Al heat sink

(3)Without heat sink

(PC=1.3W)

(1)

(2)

(3)

−6

−5

−4

−3

−2

−1

−10

−2

−4

−8

−6

TC=25˚C

–40mA

–50mA

–45mA

–30mA

–35mA

–20mA

–15mA

–10mA

–25mA

–5mA

IB =–80mA

Collector-emitter voltage VCE (V)

− 0.01

− 0.1

−1

−10

−100

− 0.1

−1

−10

Collector current I C (A)

IC /I B =20

25˚C

–25˚C

T C

=100˚C

− 0.01

− 0.1

−1

−10

−100

− 0.1

−1

−10

IC /IB =20

T C

=–25˚C

100˚C

25˚C

Collector current I C (A)

− 0.01

− 0.1

−1

−10

− 0.1

−1

−10

−100

−1000

V CE =–2V

T C

=100˚C

25˚C

–25˚C

Collector current I C (A)

− 0.01

− 0.1

−1

−10

0.1

100

1000

VCE=–2V

f=10MHz

TC=25˚C

Collector current I C (mA)

− 0.01

−1

− 0.1

−1

−10

−100

−10

−100

−1000

Collector-emitter voltage VCE (V)

Non repetitive pulse

TC=25˚C

t=10ms

t=300ms

t=1ms

ICP

0.01

0.1

−8

−2

−6

−4

Collector current IC (A)

tstg

ton

Pulsed tw =1ms

Duty cycle=1%

IC/IB=10

(–IB1=IB2)

VCC=–20V

TC=25˚C

Rth

104

103

102

10−1

10−2

10−3

10−2

10−1

102

Time t (s)

(1)Without heat sink

(2)With a 50×50×2mm Al heat sink

(1)

(2)

2SB1070-P Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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