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2SB1572-Z Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1572-Z Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 3 page ![]() SMD Type www.kexin.com.cn 2 Transistors PNP Transistors 2SB1572 ■ Typical Characterisitics COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 1000 500 200 100 50 20 10 1 2 5 IC = 20 IB . IC - Collector Current - A 0.1 0.02 0.05 0.01 0.2 0.5 10 1 2 5 TA = 125˚C 75˚C 25˚C 0˚C 25˚C COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 500 300 700 900 1100 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 VBE - Base to Emitter Voltage - mV VCE = 2 V DC CURRENT GAIN vs. COLLECTOR CURRENT 0.1 0.02 0.05 0.01 0.2 0.5 10 1 2 5 1000 100 10 IC - Collector Current - A VCE = 2 V TA = 125˚C 75˚C 25˚C 0˚C 25˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0 0.2 0.4 0.6 0.8 1.0 2.0 1.6 1.2 0.8 0.4 IB = 10 mA 20 mA 30 mA 40 mA VCE - Collector to Emitter Voltage - V FORWARD BIAS SAFE OPERATING AREA 5 2 1 10 100 20 50 10 2 5 1 0.5 0.2 0.1 VCE - Collector to Emitter Voltage - V TA = 25˚C Single Pulse 100 ms DC DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C 0 120 90 0 5 1 0 3 60 100 80 40 60 20 |
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