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TM

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Star*Power™ is a trademark of Intersil Corporation.

1-888-INTERSIL or 321-724-7143

FSGYC260R

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFET

Intersil Star*Power Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment.

Star*Power MOSFETs offer the system designer both

development of low loss Power Subsystems. Star*Power

Gold FETs combine this electrical capability with total dose

radiation hardness up to 100K RADs while maintaining the

guaranteed performance for SEE (Single Event Effects)

which the Intersil FS families have always featured.

The Intersil family of Star*Power FETs includes a series of

devices in various voltage, current and package styles. The

portfolio consists of Star*Power and Star*Power Gold

products. Star*Power FETs are optimized for total dose and

up to an LET of 37. Star*Power Gold FETS have been

optimized for SEE and Gate Charge combining SEE

performance to 80% of the rated voltage for an LET of 82

with extremely low gate charge characteristics.

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Reliability screening is available as either TXV or Space

equivalent of MIL-S-19500.

Formerly available as type TA45231W.

Features

• UIS Rated

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 17nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Symbol

Packaging

SMD2

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Engineering Samples

FSGYC260D1

100K

TXV

FSGYC260R3

100K

Space

FSGYC260R4

TM

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G

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Data Sheet

May 2000

File Number

4851.1