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FSYC160R Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSYC160R
Description  Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
PDF  8 Pages
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYC160R Datasheet(HTML) 4 Page - Intersil Corporation

  FSYC160R Datasheet HTML 1Page - Intersil Corporation FSYC160R Datasheet HTML 2Page - Intersil Corporation FSYC160R Datasheet HTML 3Page - Intersil Corporation FSYC160R Datasheet HTML 4Page - Intersil Corporation FSYC160R Datasheet HTML 5Page - Intersil Corporation FSYC160R Datasheet HTML 6Page - Intersil Corporation FSYC160R Datasheet HTML 7Page - Intersil Corporation FSYC160R Datasheet HTML 8Page - Intersil Corporation  
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4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
20
40
30
10
100
90
80
70
60
50
100
10
1
1
VDS , DRAIN TO SOURCE VOLTAGE (V)
10
100
500
TC = 25
oC
100
µs
1ms
10ms
300
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
CHARGE
QGD
QG
VG
QGS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms, VGS = 12V, ID = 46A
10-5
10-4
10-3
10-2
10-1
100
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (s)
1
10
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
0.5
0.02
0.1
0.01
0.2
101
FSYC160D, FSYC160R



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