HGTP3N60B3D datasheet(3/7 Pages) INTERSIL

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Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 150

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 82Ω

L = 1mH

Test Circuit (Figure 19)

-16

Current Rise Time

trI

-18

Current Turn-Off Delay Time

td(OFF)I

220

295

Current Fall Time

tfI

115

175

Turn-On Energy

EON

130

140

µJ

Turn-Off Energy (Note 1)

EOFF

210

325

µJ

Diode Forward Voltage

VEC

IEC = 3A

2.0

2.5

Diode Reverse Recovery Time

trr

IEC = 1A, dIEC/dt = 200A/µs-

IEC = 3A, dIEC/dt = 200A/µs-

Thermal Resistance Junction To Case

RθJC

IGBT

3.75

oC/W

Diode

3.0

oC/W

NOTE:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due

to diode recovery.

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

TC, CASE TEMPERATURE (

oC)

100

125

150

VGE = 15V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

300

400

200

100

500

600

TJ = 150

oC, R

G = 82Ω, VGE = 15V L = 500µH

HGTP3N60B3D, HGT1S3N60B3DS

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