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Die Characteristics

DIE DIMENSIONS

2667

µm x 4623µm (105 mils x 182 mils)

Thickness: 483

µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS

Glassivation

Type: Phosphorus Silicon Glass (PSG)

Thickness: 8.0k

Metallization

Type: Ti/AlCu

Thickness: 16.0k

Substrate

Rad Hard Silicon Gate, Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density

Transistor Count

328

Metallization Mask Layout

HS-201HSRH

OUT4

IN4

GND

V-

IN1

A4

A3

A1

A2

OUT3

IN3

V+

IN2

OUT2

OUT1

HS-201HSRH