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2SJ244 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SJ244
Description  P-Channel MOSFET
PDF  4 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SJ244 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  2SJ244_15 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SJ244_15 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd 2SJ244_15 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd 2SJ244_15 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
2
MOSFET
P-Channel MOSFET
2SJ244
■
Typical Characterisitics
0
0.5
1.0
1.5
2.0
50
100
150
200
Ambient Temperature Ta ( °C )
Maximum Channel Power Dissipation Curve
-0.1
-0.3
-1.0
-3
-10
-30
-100
-0.01
-0.03
-0.1
-0.3
-1.0
-3
-10
Drain to Source Voltage V
(V)
DS
Operation in this Area
is limited by RDS(on)
PW = 1 ms 1 shot
**on the alumina
ceramic board
DC
Operation
(Ta=25°C)
Maximum Safe Operation Area
0
-2
-4
-6
-8
-10
Drain to Source Voltage V
( V )
DS
-5
-4
-3
-2
-1
V
= -1.5 V
GS
-2
-2.5
-3
-3.5
- 4.5
-5
-4
Pulse Test
Typical Output Characteristics
0
-1
-3
-4
-5
-5
-4
-3
-2
-1
-2
Gate to Source Voltage V
( V )
GS
Ta = -25 °C
+25
+75
V = -5 V
DS
Pulse Test
Typical Forward Transfer Characteristics
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
0.2
0.5
1.0
2
5
10
20
Drain Current I
(A)
D
V
= -5 V
DS
Pulse Test
Ta = -25 °C
+25
+75
Forward Transfer Admittance vs.
Drain Current
-0.1
-0.2
-0.5
-1.0
-2
-5
0.1
0.2
0.5
1.0
2
5
10
Drain Current I
(A)
D
V
= -4 V
GS
-2 V
-3 V
Pulse Test
Drain to Source on State Resistance vs.
Drain Current
-10



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