2SJ360_15 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

2SJ360

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-10mA, VGS=0V

-60

Zero Gate Voltage Drain Current

IDSS

VDS=-60V, VGS=0V

-100

Gate-Body leakage current

IGSS

VDS=0V, VGS=±16V

Gate Threshold Voltage

VGS(th)

VDS=-10V,ID=-1mA

-0.8

-2

VGS=-4V, ID=-0.5A

1.2

VGS=-10V, ID=-0.5A

0.73

Forward Transconductance

gFS

VDS=-10V, ID=-0.5A

0.5

Input Capacitance

Ciss

155

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

6.5

Gate Source Charge

Qgs

4.5

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

100

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Continuous drain reverse current

IDR

-1

Pulse drain reverse current

IDRP

-4

Diode Forward Voltage

VSD

IDR=-1A,VGS=0V

-1.8

IF=-1A, VGS=0, dI/dt=50A/μs

Static Drain-Source On-Resistance

RDS(On)

VGS=0V, VDS=-10V, f=1MHz

VGS=-10V, VDS=-48V, ID=-1A

VGS

−

10V

ID −0.5A

VDD ≒ −30V

RL 60Ω

VOUT

Duty ≦1%, tw 10µs

≤

≈

■

Marking

Z*8

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