5-8

File Number

2220.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRF9130

-12A, -100V, 0.30 Ohm, P-Channel Power

MOSFET

These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

Formerly developmental type TA17511.

Features

• -12A, -100V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Packaging

JEDEC TO-204AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9130

TO-204AA

IRF9130

NOTE: When ordering, use the entire part number.

G

D

S

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet

February 1999