SI2301BDS datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel Enhancement MOSFET

SI2301BDS (KI2301BDS)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-20

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V, TJ=55℃

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=±8V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-0.4

-0.95

VGS=-4.5V, ID=-2.8A

100

VGS=-2.5V, ID=-2.0A

110

150

VGS=-4.5V, VDS ≤ -5V

-6

VGS=-2.5V, VDS ≤ -5V

-3

Forward Transconductance *1

gFS

VDS=-5V, ID=-2.8A

6.5

Input Capacitance *2

Ciss

375

Output Capacitance *2

Coss

Reverse Transfer Capacitance *2

Crss

Total Gate Charge *2

4.5

Gate Source Charge *2

Qgs

0.7

Gate Drain Charge *2

Qgd

1.1

Turn-On DelayTime *3

td(on)

Turn-On Rise Time *3

Turn-Off DelayTime *3

td(off)

Turn-Off Fall Time *3

5 sec

-0.72

Steady State

-0.6

Diode Forward Voltage

VSD

IS=-0.75A,VGS=0V

-0.8

-1.2

VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω

ID=-1.0A

Maximum Body-Diode Continuous Current

On state drain current *1

ID(ON)

Zero Gate Voltage Drain Current

IDSS

mΩ

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-6V, f=1MHz

VGS=-4.5V, VDS=-6V, ID=-2.8A

*1 Pulse test: PW ≤ 300us duty cycle ≤ 2%.

*2 For DESIGN AID ONLY, not subject to production testing.

*3 Switching time is essentially independent of operating temperature.

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Marking

L1*

SI2301BDS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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