SI2315BDS datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel Enhancement MOSFET

SI2315BDS (KI2315BDS)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-12

VDS=-12V, VGS=0V

-1

VDS=-12V, VGS=0V, TJ=55℃

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=±8V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-0.45

-0.9

VGS=-4.5V, ID=-3.85A

VGS=-2.5V, ID=-3.4A

VGS=-1.8V, ID=-2.7A

100

VGS=-4.5V, VDS=-5V

-6

VGS=-2.5V, VDS=-5V

-3

Forward Transconductance

gFS

VDS=-5V, ID=-3.85A

Input Capacitance

Ciss

715

Output Capacitance

Coss

275

Reverse Transfer Capacitance

Crss

200

Total Gate Charge

Gate Source Charge

Qgs

1.1

Gate Drain Charge

Qgd

2.3

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

-1.6

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-1.2

VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω

ID=1.0A *1

On state drain current

ID(ON)

Zero Gate Voltage Drain Current

IDSS

mΩ

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-6V, f=1MHz *1

VGS=-4.5V, VDS=-6V, ID=-3.85A *1

*1 Pulse test: PW ≤ 300 μs duty cycle ≤ 2 %.

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Marking

M5*

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