SI2333CDS datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel Enhancement MOSFET

SI2333CDS (KI2333CDS)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-12

VDS=-12V, VGS=0V

-1

VDS=-12V, VGS=0V, TJ=55℃

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=±8V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-0.4

-1

VGS=-4.5V, ID=-5.1A

28.5

VGS=-2.5V, ID=-4.5A

VGS=-1.8V, ID=-2.0A

On state drain current *1

ID(ON)

VGS=-4.5V, VDS=-5V

-20

Forward Transconductance *1

gFS

VDS=-5V, ID=-1.9A

1.6

Gate Resistance

f=1.0MHz

4.0

Input Capacitance

Ciss

1225

Output Capacitance

Coss

315

Reverse Transfer Capacitance

Crss

260

VGS=-4.5V, VDS=-6V, ID=-5.1A

Gate Source Charge

Qgs

1.9

Gate Drain Charge

Qgd

3.8

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode Reverse Recovery Charge

Qrr

Body Diode Reverse Recovery Time

trr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Maximum Body-Diode Continuous Current

TC=25℃

-1.0

Pulse Diode Forward Current *1

ISM

-20

Diode Forward Voltage

VSD

IS=-1.0A,VGS=0V

-0.7

-1.2

Total Gate Charge

VGS=-2.5V, VDS=-6V, ID=-5.1A

IF = 1.0 A, di/dt = 100 A/ us,TJ=25℃

VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=1Ω

ID=-1.0A

VGS=0V, VDS=-6V, f=1MHz

Zero Gate Voltage Drain Current

IDSS

mΩ

Static Drain-Source On-Resistance *1

RDS(On)

*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.

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Marking

O3*

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