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ITF87012SVT Datasheet(PDF) 2 Page - Intersil Corporation |
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ITF87012SVT Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 12 page  2 Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 20 - - V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V - - 10 µA Gate to Source Leakage Current IGSS VGS = ±12V - - ±10 uA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 0.5 - 1.5 V Drain to Source On Resistance rDS(ON) ID = 6.0A, VGS = 4.5V (Figures 8, 9) - 0.028 0.035 Ω ID = 3.5A, VGS = 4.0V (Figure 8) - 0.029 0.038 Ω ID = 3.0A, VGS = 2.5V (Figure 8) - 0.037 0.045 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambi- ent RθJA Pad Area = 0.40 in2 (258.1 mm2) (Note 2) - - 62.5 oC/W Pad Area = 0.0163 in2 (10.54 mm2) (Figure 20) - - 198.2 oC/W Pad Area = 0.0056 in2 (3.60 mm2) (Figure 20) - - 218.4 oC/W SWITCHING SPECIFICATIONS (VGS = 2.5V) Turn-On Delay Time td(ON) VDD = 10V, ID = 3.0A VGS = 2.5V, RGS = 15 Ω (Figures 14, 18, 19 ) -79- ns Rise Time tr - 315 - ns Turn-Off Delay Time td(OFF) - 154 - ns Fall Time tf - 188 - ns SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Delay Time td(ON) VDD = 10V, ID = 6.0A VGS = 4.5V, RGS = 16 Ω (Figures 15, 18, 19 ) -42- ns Rise Time tr - 142 - ns Turn-Off Delay Time td(OFF) - 236 - ns Fall Time tf - 200 - ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 4.5V VDD = 10V, ID = 5.5A, Ig(REF) = 1.0mA (Figures 13, 16, 17 ) - 7.7 - nC Gate Charge at 2V Qg(2) VGS = 0V to 2V - 4.0 - nC Threshold Gate Charge Qg(TH) VGS = 0V to 0.5V - 0.30 - nC Gate to Source Gate Charge Qgs - 1.1 - nC Gate to Drain “Miller” Charge Qgd - 2.7 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 10V, VGS = 0V, f = 1MHz (Figures 12 ) - 655 - pF Output Capacitance COSS - 227 - pF Reverse Transfer Capacitance CRSS - 118 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 5.5A - 0.84 - V Reverse Recovery Time trr ISD = 5.5A, dISD/dt = 50A/µs - 22 - ns Reverse Recovered Charge QRR ISD = 5.5A, dISD/dt = 50A/µs - 6.1 - nC ITF87012SVT |
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