RFD15P06 datasheet(2/8 Pages) INTERSIL

2 / 8 page

4-104

Absolute Maximum Ratings TC = 25oC Unless Otherwise Speciﬁed

RFD15P06, RFD15P06SM, RFP15P06

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

-60

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR

-60

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Figure 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.533

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

-60

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

-2.0

-4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-1

µA

VDS = 0.8 x Rated BVDSS, TC = 150

-25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID ≈ 15A, VGS = -10V, (Figure 9)

0.150

Turn-On Time

tON

VDD = -30V, ID = 7.5A

RL = 4.0Ω, VGS = -10V

RG = 12.5Ω

(Figure 13)

Turn-On Delay Time

td(ON)

-16-

Rise Time

-30-

Turn-Off Delay Time

td(OFF)

-50-

Fall Time

-20-

Turn-Off Time

tOFF

100

Total Gate Charge

Qg(TOT)

VGS = 0V to -20V

VDD = -48V, ID = 15A,

RL = 3.20Ω

IG(REF) = 0.65mA

150

Gate Charge at -10V

Qg(-10)

VGS = 0V to -10V

Threshold Gate Charge

Qg(TH)

VGS = 0V to -2V

3.5

Input Capacitance

CISS

VDS = -25V, VGS = 0V

f = 1MHz

(Figure 12)

1150

Output Capacitance

COSS

300

Reverse Transfer Capacitance

CRSS

-56-

Thermal Resistance Junction to Case

RθJC

TO-220AB, TO-251AA, TO-252AA

1.875

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251AA, TO-252AA

100

oC/W

TO-220AB

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Notte 2)

VSD

ISD = -15A

-1.5

Reverse Recovery Time

trr

ISD = -15A, dISD/dt = 100A/µs

125

NOTES:

2. Pulsed: pulse duration

≤ 300ms Max, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

RFD15P06, RFD15P06SM, RFP15P06

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