RFD16N05LSM datasheet(2/6 Pages) INTERSIL

2 / 6 page

6-164

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD16N05L,

RFD16N05LSM

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.48

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250mA, VGS = 0V, Figure 10

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250mA, Figure 9

Zero Gate Voltage Drain Current

IDSS

VDS = 40V, VGS = 0V

TC = 150

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V, VDS = 0V

100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 16A, VGS = 5V

0.047

Ω

ID = 16A, VGS = 4V

0.056

Ω

Turn-On Time

t(ON)

VDD = 25V, ID = 8A,

VGS = 5V, RGS = 12.5Ω

Figures 15, 16

Turn-On Delay Time

td(ON)

-14

Rise Time

-30

Turn-Off Delay Time

td(OFF)

-42

Fall Time

-14

Turn-Off Time

t(OFF)

100

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 40V,

ID = 16A,

RL = 2.5Ω

Figures 17, 18

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

Thermal Resistance Junction to Case

RθJC

2.083

oC/W

Thermal Resistance Junction to Ambient

RθJA

100

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 16A

1.5

Diode Reverse Recovery Time

trr

ISD = 16A, dISD/dt = 100A/µs

125

NOTES:

2. Pulse Test: Pulse Width

≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.

RFD16N05L, RFD16N05LSM

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