RFP2N08 datasheet(2/4 Pages) INTERSIL

2 / 4 page

5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFP2N08

RFP2N10

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

100

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR

100

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.2

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250

µA, VGS = 0

RFP2N10

100

RFP2N08

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 8)

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, TC = 25

oC-

µA

VDS = 0.8 x Rated BVDSS, TC = 125

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 2A, VGS = 10V (Figures 6, 7)

1.05

Ω

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 2A, VGS = 10V

2.1

Turn-On Delay Time

td(ON)

ID ≈ 1A, VDD = 50V, RG = 50Ω,

RL = 25Ω, VGS = 10V

(Figures 10, 11, 12)

-17

Rise Time

-30

Turn-Off Delay Time

td(OFF)

-30

Fall Time

-17

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f =1MHz

(Figure 9)

200

Output Capacitance

COSS

Reverse-Transfer Capacitance

CRSS

Thermal Resistance Junction to Case

RθJC

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 2A

1.4

Diode Reverse Recovery Time

trr

ISD = 2A, dISD/dt = 50A/µs

100

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

RFP2N08, RFP2N10

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