MMBT619_15 datasheet(2/2 Pages) SECOS

2 / 2 page

MMBT619

2A , 50V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

20-Feb-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

IC=100µA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=100µA, IC=0

Collector Cut-Off Current

ICBO

100

VCB=40V, IE=0

Emitter Cut-Off Current

IEBO

100

VEB=4V, IC=0

DC Current Gain

hFE

200

VCE=2V, IC=10mA

300

VCE=2V, IC=200mA

200

VCE=2V, IC=1A

100

VCE=2V, IC=2A

VCE=2V, IC=6A

Collector to Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=10mA

200

IC=1A, IB=10mA

220

IC=2A, IB=50mA

Base to Emitter Saturation Voltage

VBE(sat)

IC=2A, IB=50mA

Base to Emitter On Voltage

VBE(on)

IC=2A, VCE=2V

Collector output capacitance

Cob

VCB=10V, f=1MHz

Turn-On Time

t(on)

170

VCC=10V, IC=1A, IB1= -IB2=10mA

Turn-Off Time

t(off)

750

Transition Frequency

100

MHz

VCE=10V, IC=50mA, f=100MHz

Note:

Pulse width≦300µs, duty cycle≦2.0%

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