IRF5305L datasheet(2/10 Pages) IRF

2 / 10 page

IRF5305S/L

www.irf.com

DD = -25V, Starting TJ = 25°C, L = 2.1mH

RG = 25Ω, IAS = -16A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

SD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Uses IRF5305 data and test conditions

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-55

–––

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– -0.034 –––

V/°C

Reference to 25°C, ID = -1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

0.06

Ω

VGS = -10V, ID = -16A

VGS(th)

Gate Threshold Voltage

-2.0

–––

-4.0

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

8.0

–––

VDS = -25V, ID = -16A

–––

-25

µA

VDS = -55V, VGS = 0V

–––

-250

VDS = -44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Total Gate Charge

–––

ID = -16A

Qgs

Gate-to-Source Charge

–––

VDS = -44V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = -10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

VDD = -28V

Rise Time

–––

ID = -16A

td(off)

Turn-Off Delay Time

–––

RG = 6.8Ω

Fall Time

–––

RD = 1.6Ω, See Fig. 10

Between lead,

–––

and center of die contact

Ciss

Input Capacitance

–––

1200 –––

VGS = 0V

Coss

Output Capacitance

–––

520

–––

VDS = -25V

Crss

Reverse Transfer Capacitance

–––

250

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

7.5

Internal Source Inductance

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

-1.3

TJ = 25°C, IS = -16A, VGS = 0V

trr

Reverse Recovery Time

–––

110

TJ = 25°C, IF = -16A

Qrr

Reverse Recovery Charge

–––

170

250

di/dt = -100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

-31

-110

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