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IRF5810 Datasheet(PDF) 2 Page - International Rectifier |
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IRF5810 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF5810 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA ––– 60 90 VGS = -4.5V, ID = -2.9 ––– 87 135 VGS = -2.5V, ID = -2.3A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 5.4 ––– ––– S VDS = -10V, ID = -2.9A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 6.4 9.6 ID = -2.9A Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS = -4.5V td(on) Turn-On Delay Time ––– 8.2 ––– VDD = -10V tr Rise Time ––– 14 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 62 ––– RG = 6.0Ω tf Fall Time ––– 53 ––– VGS = -4.5V Ciss Input Capacitance ––– 650 ––– VGS = 0V Coss Output Capacitance ––– 110 ––– pF VDS = -16V Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1kHz Source-Drain Ratings and Characteristics A -11 ––– ––– ––– -1.0 ––– S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Surface mounted on 1 in square Cu board Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = -1.0A Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = -100A/µs |
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