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IRF7468 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7468
Description  Power MOSFET(Vdss=40V, Id=9.4A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7468 Datasheet(HTML) 2 Page - International Rectifier

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IRF7468
2
www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
27
–––
–––
S
VDS = 20V, ID = 8.0A
Qg
Total Gate Charge
–––
23
34
ID = 8.0A
Qgs
Gate-to-Source Charge
–––
6.4
9.6
nC
VDS = 20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.7
10
VGS = 4.5V,
ƒ
Qoss
Output Gate Charge
–––
17
26
VGS = 0V, VDS = 16V
td(on)
Turn-On Delay Time
–––
7.6
–––
VDD = 20V
tr
Rise Time
–––
2.3
–––
ID = 8.0A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 1.8Ω
tf
Fall Time
–––
3.8
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
2460 –––
VGS = 0V
Coss
Output Capacitance
–––
490
–––
VDS = 20V
Crss
Reverse Transfer Capacitance
–––
38
–––
pF
ƒ = 1.0MHz
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
160
mJ
IAR
Avalanche Current

–––
8.0
A
Avalanche Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.81
1.3
V
TJ = 25°C, IS = 8.0A, VGS = 0V
ƒ
–––
0.65
–––
TJ = 125°C, IS = 8.0A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
45
68
ns
TJ = 25°C, IF = 8.0A, VR=20V
Qrr
Reverse Recovery Charge
–––
76
110
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
58
87
ns
TJ = 125°C, IF = 8.0A, VR=20V
Qrr
Reverse Recovery Charge
–––
110
160
nC
di/dt = 100A/µs
ƒ
S
D
G
Diode Characteristics
2.3
74
A
VSD
Diode Forward Voltage
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Ω
µA
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.025
–––
V/°C
Reference to 25°C, ID = 1mA
–––
11.7
15.5
VGS = 10V, ID = 9.4A
„
–––
13.0
17.0
VGS = 4.5V, ID = 7.5A
„
–––
18.0 35.0
VGS = 4.5V, ID = 4.7A
„
VGS(th)
Gate Threshold Voltage
0.8
–––
2.0
V
VDS = VGS, ID = 250µA
–––
–––
20
VDS = 32V, VGS = 0V
–––
–––
100
VDS = 32V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -12V



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