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SCG3019 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SCG3019
Description  N-Channel Enhancement MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCG3019 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SCG3019 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SCG3019 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SCG3019 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SCG3019
N-Channel Enhancement MOSFET
18-Dec-2013 Rev. B
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
CHARACTERISTICS
SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITIONS
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±1
μA
VGS= ±20V, VDS=0V
Gate Threshold Voltage
VGS(th)
0.8
-
1.5
V
VDS= 3V, ID=100μA
-
-
8
VGS= 4V, ID = 10mA
Static Drain-Source On Resistance
RDS(ON)
-
-
13
Ω
VGS= 2.5V, ID = 1mA
Forward transfer admittance
gfs
20
-
-
mS
VDS= 3V, ID = 10mA
Dynamic Characteristics
Input Capacitance
Ciss
-
13
-
Output Capacitance
Coss
-
9
-
Reverse Transfer Capacitance
Crss
-
4
-
pF
VDS= 5V, VGS= 0V, f= 1MHz
Switching Characteristics
Turn-On Delay Time
Td(ON)
-
15
-
Rise Time
Tr
-
35
-
Turn-Off Delay Time
Td(OFF)
-
80
-
Fall Time
Tf
-
80
-
nS
VGS= 5V, VDD= 5V, ID= 10mA,
RG= 10Ω, RL= 500Ω



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