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IRF7704 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7704 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7704 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -40 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 46 VGS = -10V, ID = -4.6A ––– ––– 74 VGS = -4.5V, ID = -3.7A VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 7.2 ––– ––– S VDS = -10V, ID = -4.6A ––– ––– -10 VDS = -32V, VGS = 0V ––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 25 38 ID = -4.6A Qgs Gate-to-Source Charge ––– 10 15 nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 9.5 14 VGS = -4.5V td(on) Turn-On Delay Time ––– 25 ––– VDD = -20V tr Rise Time ––– 360 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 190 ––– RG = 6.0Ω tf Fall Time ––– 100 ––– VGS = -4.5V Ciss Input Capacitance ––– 3150 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0kHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V trr Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = -1.5A Qrr Reverse Recovery Charge ––– 41 62 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -19 ––– ––– ––– -1.5 ––– S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Surface mounted on 1 in square Cu board |
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