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IRF9410 Datasheet(PDF) 2 Page - International Rectifier |
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IRF9410 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF9410 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.024 0.030 VGS = 10V, ID = 7.0A ––– 0.032 0.040 Ω VGS = 5.0V, ID = 4.0A ––– 0.037 0.050 VGS = 4.5V, ID = 3.5A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance ––– 14 ––– S VDS = 15V, ID = 7.0A ––– ––– 2.0 µA VDS = 24V, VGS = 0V ––– ––– 25 VDS = 24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– 18 27 ID = 2.0A Qgs Gate-to-Source Charge ––– 2.4 3.6 nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge ––– 4.9 7.4 VGS = 10V, See Fig. 10 td(on) Turn-On Delay Time ––– 7.3 15 VDD = 25V tr Rise Time ––– 8.3 17 ns ID = 1.0A td(off) Turn-Off Delay Time ––– 23 46 RG = 6.0Ω, VGS = 10V tf Fall Time ––– 17 34 RD = 25Ω Ciss Input Capacitance ––– 550 ––– VGS = 0V Coss Output Capacitance ––– 260 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 9 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.78 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V trr Reverse Recovery Time ––– 40 80 ns TJ = 25°C, IF = 2.0A Qrr Reverse RecoveryCharge ––– 63 130 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– 37 2.8 A S D G
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 6.6mH RG = 25Ω, IAS = 4.6A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance |
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